| Chemicals |
Name |
| Ace |
Acetone |
| AGW |
Alcohol/Glycol/Water |
| BC |
Butyl Cellusolve |
| BHF |
Buffered Hydrofluoric Acid |
| BRM |
Bromine: Methyl Alcohol (Methanol) |
| CRY |
Cryogenic (Gas) Liquid |
| LCl2 |
Chlorine |
| LH |
Liquid Hydrogen |
| LHe |
Liquid Helium |
| LN2 |
Liquid Nitrogen |
| LOX |
Liquid Oxygen |
| LAR |
Liquid Argon |
| Lair |
Liquid Air |
| DCE |
Dry Chemical Etching (ionized gas) |
| EA |
Ethylene Acetate |
| ED |
Ethylenediamine |
| EDP |
ED:Pyrocatachol |
| EG |
Ethylene Glycol |
| EOH |
Ethyl Alcohol (Ethanol) |
| FG |
Forming Gas (85 % N2:15 % H2) |
| Gly |
Glycerin |
| HAc |
(Glacial) acetic acid |
| HOAc |
(Glacial) acetic acid |
| GAA |
(Glacial) acetic acid |
| IPA |
Isopropyl Alcohol |
| ISO |
Isopropyl Alcohol |
| KEY |
Ketone (ref:acetone) |
| MEK |
Methyl Ethyl Ketone |
| MeOH |
Methyl Alcohol (Methanol) |
| PCE |
Perchloroethylene |
| Perk |
Perchloroethylene |
| PG |
Propylene Glycol |
| P/R |
Photo Resist (Lacquer) (SH-Shipley, AZ-Horscht, COP-Similar to AZ-types, KMER-KM series no loger used, PMMA-Designet for electron litography |
| TCA |
Trichloroethane |
| TCE |
Trichloroethylene |
| Crystal, Physics |
Name |
| G(SG) |
Specific Gravity (geology) |
| g/cm3 |
Density (SG) (chemistry) |
| H |
Hardness (Mohs — geology),
Brinell Hardness —- (metals),
Knoop Hardness (metals/materials),
Rockwell Hardness (metals),
Shore Hardness (rubber/plastic),
Vickers Hardness (metals) |
| n |
Refractive Index (Isometric System) |
| bcc |
body-centered cubic |
| fcc |
face-centered cubic |
| hcp |
hexagonal close-packed |
| tcp |
tetragonal close-packed |
| alpha, beta, delta |
tetragonal and other axes |
| Crystals, planes |
- |
| (111)/(100) |
Specific plane (Miller Indices) (xxx) parentheses |
| {110} |
All planes of this type {xxx} brackets |
| <221> |
Plane directions <xxx> hachures |
| (10TO) |
Hexagonal System (4-axes). May be as: (10.0) |
| (TTT) |
Negative over-script "T" denotes negative crystal axis. |
| Crystal Structure |
Name |
| c |
colloidal (c-Si) |
| a |
amorphous (a-Ge) |
| c |
crystalline (c-Si) |
| poly |
polycrystalline (poly-Si) = crystalline |
| me |
microcrystalline (mc-Si) |
| mu |
microcrystalline (mu-Si) (Greek letter "mu" = µ) |
| Mc |
macrocrystalline (Mc-Si) |
| i/DLC |
Diamond-Like Carbon (i-C/DLC) |
| xtl |
single crystal |
| sxtl |
single crystal |
| bixtl |
bicrystal |
| r |
ribbon crystal (dendritic) |
| GB |
grain boundary |
| Etching |
Name |
| WCE |
Wet Chemical Etching (WF=Wet Format, e.g., liquids, etc.) |
| EE |
Electrolytic Etching (EF=Electrolytic Format) |
| DCE |
Dry Chemical Etching (DF=Dry Format, e.g., ionized gas) |
| Process/Equipment
Equipment Microscopes |
Name |
| AES |
Auger Electron Microscope |
| EDX |
Energy Dispersive X-ray |
| ESCA |
Electron Spectroscopy for Chemical Analysis |
| FIM |
Field Ion Microscope |
| HEED |
High Energy Electron Diffraction |
| LEED |
Low Energy Electron Diffraction |
| PLM |
Polarized Infrared Microscope |
| SAM |
Scanning Auger Microscope |
| SIMS |
Secondary Ion-Mass Spectroscopy |
| SLAM |
Scanning Laser Acoustic |
| UPS |
Ultraviolet Photo-Electron Spectroscopy |
| XPA |
X-ray Photo-Electron Spectroscopy |
| SEM |
Scanning Electron Microscope |
| TEM |
Transmission Electron Microscope |
| Chemical Vapor Deposition |
Name |
| CVD |
Chemical Vapor Deposition |
| APCVD |
Atmospheric Pressure CVD |
| HOMOCVD |
Homogeneous CVD |
| HPCVD |
High Pressure CVD |
| LPOMCVD |
Low Pressure OMCVD |
| OMCVD |
Organo-metallic CVD |
| PECVD |
Plasma Enhanced CVD |
| VHPCVD |
Very High Pressure CVD |
| HMCVD |
Horizontal Magnetic CVD |
| VMCVD |
Vertical Magnetic CVD |
| Epitaxy Growth (Epi) |
Name |
| HEP |
Horizontal Epitaxy |
| HPE |
Horizontal Phase Epitaxy |
| HWE |
Hot-Wall Epitaxy |
| LPE |
Liquid Phase Epitaxy |
| CCLPE |
Current Controlled LPE |
| L-SPE |
Lateral Solid Phase Epi |
| VEP |
Vertical Epitaxy |
| VPE |
Vapor Phase Epitaxy |
| V-SPE |
Vertical Solid Phase Epi |
| MBE |
Molecular Beam Epitaxy |
| Growth Systems, general |
Name |
| CZ |
Czochralski (pulled xtl) |
| FZ |
Float Zone (solid xtl) |
| BM |
Bridgman Method |
| **HB |
Horizontal Bridgman |
| VB |
Vertical Bridgman |
| EFG |
Edge Defined Film Fed Growth (ribbon xtl) + other acronyms by developers |
| VM |
Verneiul Method (hot droplet) |
| LEVCZ |
Levitation CZ (development for space application) |
| LEC |
Liquid Encapsulated CZ |
| MFG(FS)
|
Molten Flux Growth or Fused Salt (Note: xtls may be contaminated by flux) |
| HEM |
Heater Enhance Method (poly CZ type) |
| Vapor Transport Deposition |
Name |
| VT |
Vapor Transport |
| CSVT |
Close-Spaced VT |
| Element Doping/Deposition |
Name |
| ALY |
Alloy into material (Al into silicon is Square Law) |
| DIF |
Diffuse element into material (B, Sb, As, etc., is Gaussian Diffusion Law). |
| I2 |
Ion implantation (Si+ ionized particle at eV/MeV energy levels, also, Gaussian). |
| EVAP/M |
Metal evaporation + thermal |
| DEC/M |
Drive-in (also used to metal decorate defects/decoration) |
| EVAP/Ox |
Oxide deposit with doping element as glass (ASG, BSG, PSG, BPSG, etc., and may be a nitride as final coat or for thermal drive-in) |
| SSDIF |
Solid-Solid Diffusion (may be Solid Phase Epi, SPE) |
| CONV |
Evaporate metal + thermal conversion, e.g., Silicides. (MoSi, MO2Si, MoSi2, etc.) |
| OX |
Oxidation (Wet, Dry, Steam or SILOX System). Also electrolytic. |
| W/Mo |
Std light filaments, white |
| SILOX |
Oxidation from SiH4:O2/N2 300—500 oC |
| RF/DC |
RF/DC Plasma deposition of oxides, nitrides, metals and compounds under vacuum |
| V-MET |
Metal(s) evaporation under vacuum (metallization). With RF/DC Plasma as metallization or thin film compound deposition |
| RF-MAG |
RF magnetron deposition. Magnet enhances deposition rate/opn |
| EB/E-Beam |
Election Beam metallization (260oC bent beam now common) |
| PD |
Pyrolitic Deposition {See: CVD) |
| Etching Systems/Methods |
Name |
| IM |
Ion Milling (pattern ion gas etch of thin films) |
| EBL |
Electron Beam Lithography (ref: P/R with PMMA) |
| MFE |
Molten Flux Etching |
| PE |
Plasma Etching |
| PL |
Photolithography |
| RIE |
Reactive Ion Etching |
| IE |
Ion Etching (nonreactive) |
| PR |
Photo Resist |
| Water, H2O |
Name |
| Recire |
Recirculating water |
| DI |
Distilled |
| dd) |
double distilled (2d) (2DI |
| ddd |
triple distilled (3d) (3DI) |
| Hi-Q |
DI + ion exchange |
| HQ |
High Quality |
| dm |
Demineralized |
| di |
Deionized |
| Others |
Name |
| RT |
Room temperature (20-25 oC) |
| IR |
Infrared light (below VL) |
| UV |
Ultaviolet light (above VL) |
| VL |
Visible light spectrum, white |
| D.C. (d.c.) |
Direct Current Circuits |
| A.C. (a.c.) |
Alternating Current Circuits |
| CD |
Current Density (A/cm2, A/mm2, ...) |
